出版社:哈尔滨工业大学出版社
年代:2013
定价:150.0
本册由9章组成,介绍介绍Ⅲ-Ⅴ族 半导体化合物,10.纤锌矿型氮化镓,11.立方氮化镓,12.磷化镓(差距),13.砷化镓(砷化镓),14.锑化镓(GaSb),15.氮化铟(酒店),16.磷化铟(InP),17.砷化铟(成),18.锑化铟(InSb),共9种化合物的结构属性、热性能、弹性、声子和晶格振动性质、集成效应和相关属性、能带结构:能带、能带结构:电子和孔有效质量、电子形变势、电子亲和力和肖特基势垒高度、光学特性、,电光和非线性光学特性、载体运输属性等。
Preface
Acknowledgments
Contents of Other Volumes
1 Cubic Boron Nitride (c-BN)
1.1 Structural Properties
1.1.1 Ionicity
1.1.2 Elemental Isotopic Abundance and Molecular Weight
1.1.3 Crystal Structure and Space Group
1.1.4 Lattice Constant and Its Related Parameters
1.1.5 Structural Phase Transition
1.1.6 Cleavage Plane
1.2 Thermal Properties
1.2.1 Melting Point and Its Related Parameters
1.2.2 Specific Heat
1.2.3 Debye Temperature
1.2.4 Thermal Expansion Coefficient
1.2.5 Thermal Conductivity and Diffusivity
1.3 Elastic Properties
1.3.1 Elastic Constant
1.3.2 Third-Order Elastic Constant
1.3.3 Young's Modulus, Poisson's Ratio, and Similar
1.3.4 Microhardness
1.3.5 Sound Velocity
1.4 Phonons and Lattice Vibronic Properties
1.4.1 Phonon Dispersion Relation
1.4.2 Phonon Frequency
1.4.3 Mode Gruneisen Parameter
1.4.4 Phonon Deformation Potential
1.5 Collective Effects and Related Properties
1.5.1 Piezoelectric Constant
1.5.2 Frohlich Coupling Constant
1.6 Energy-Band Structure: Energy-Band Gaps
1.6.1 Basic Properties
1.6.2 Eo-Gap Region
1.6.3 Higher-Lying Direct Gap
1.6.4 Lowest Indirect Gap
1.6.5 Conduction-Valley Energy Separation
1.6.6 Direct-Indirect-Gap Transition Pressure
1.7 Energy-Band Structure: Electron and Hole Effective Masses l
1.7.1 Electron Effective Mass: F Valley
1.7.2 Electron Effective Mass: Satellite Valley
1.7.3 Hole Effective Mass
1.8 'Electronic Deformation Potential
1.8.1 Intravalley Deformation Potential: I- Point
1.8.2 Intravalley Deformation Potential: High-Symmetry Points
1.8.3 Intervalley Deformation Potential
1.9 Electron Affinity and Schottky Barrier Height
1.9.1 Electron Affinity
1.9.2 Schottky Barrier Height
1.10 Optical Properties
1.10.1 Summary of Optical Dispersion Relations
1.10.2 The Reststrahlen Region
1.10.3 At or Near the Fundamental Absorption Edge
1.10.4 The Interband Transition Region
1.10.5 Free-Carrier Absorption and Related Phenomena
1.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
1.11.1 Elastooptic Effect
1.11.2 Linear Electrooptic Constant
1.11.3 Quadratic Electrooptic Constant
1.11.4 Franz-Keldysh Effect
1.11.5 Nonlinear Optical Constant
1.12 Carrier Transport Properties
1.12.1 Low-Field Mobility: Electrons
1.12.2 Low-Field Mobility: Holes
1.12.3 High-Field Transport: Electrons
1.12.4 High-Field Transport: Holes
1.12.5 Minority-Carrier Transport: Electrons in p-Type Materials
1.12.6 Minority-Carrier Transport: Holes in n-Type Materials
……
2 Hexagonal Boron Nitride (h-BN)
3 Boron Phosphide (BP)
4 Boron Arsenide (BAs)
5 Wurtzite Aluminum Nitride (w-AIN)
6 Cubic Aluminum Nitride (c-AIN)
8 Aluminum Arsenide (AIAs)
9 Aluminum Antimonide (AISb)
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出版地 | 哈尔滨 | 出版单位 | 哈尔滨工业大学出版社 |
版次 | 1版 | 印次 | 1 |
定价(元) | 150.0 | 语种 | 英文 |
尺寸 | 23 × 19 | 装帧 | 平装 |
页数 | 印数 |
半导体物理性能手册是哈尔滨工业大学出版社于2014.1出版的中图分类号为 O472-62 的主题关于 半导体材料-物理性能-手册-英文 的书籍。
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