微电子专业英语
出版社：电子工业出版社
年代：2012
定价：38.0
书籍简介:
本书各章安排：第一章为专业简介，简要介绍了微电子技术与半导体集成电路的历史和发展。第二章描述半导体物理的基础内容：晶格与能带的结构、半导体的导电性能和载流子浓度。系统的介绍了半导体材料与器件物理相关的一些基本概念，包括晶格结构、能带理论、有效质量近似、电子态密度等。接下来的第三、四章系统讲述了几种重要的半导体器件及其特性。从最基本的pn二极管出发，讨论了双极型器件和场效应器件。第五章简单介绍了半导体集成电路，包括数字和模拟两部分。第六章介绍了半导体集成电路的工艺、测试、封装等内容。
书籍目录:
目 录
Session 1 Introduction to Semiconductor
1.1 What is Semiconductor
1.2 Classification of Semiconductor
Reading Materials
Session 2 Crystal Structure
2.1 Primitive Cell and Crystal Plane
2.2 Atomic Bonding
Reading Materials
Session 3 Band Model
3.1 Introduction to Quantum Mechanics
3.2 Band
3.3 Effective Mass Theory
Reading Materials
Session 4 The Semiconductor in Equilibrium
4.1 Charge Carriers in Semiconductor
4.2 Intrinsic Semiconductor
4.3 Extrinsic Semiconductor
Reading Materials
Session 5 Carrier Transport
5.1 Overview of Carrier Transport
5.2 Low Field Transport
5.3 High Field Transport
5.4 Diffusion Current
Session 6 Nonequilibrium Excess Carriers in Semiconductor
6.1 Recombination
6.2 Minority Carrier Lifetime
6.3 Ambipolar Transport
Reading Materials
Session 7 The pn Junction （ Ⅰ ）
7.1 Introduction
7.2 Basic Structure of the pn Junction
7.3 Energy Bands for a pn Junction
7.4 Ideal CurrentVoltage Relationship
7.5 Characteristics of a Practical Diode
Reading Materials
Session 8 The pn Junction（ Ⅱ ）
8.1 Breakdown in pn Junction
8.2 SmallSignal Diffusion Resistance of the pn Junction
8.3 Junction Capacitance
8.4 Diffusion or Storage Capacitance
8.5 Diode Transients
8.6 Circuit Models for Junction Diodes
Reading Materials
Session 9 MetalSemiconductor Contacts
9.1 Schottky Contacts
9.2 Ohmic Contacts
Reading Materials
Session 10 Heterojunctions
10.1 Strain and Stress at Heterointerfaces
10.2 Heterojunction Materials
10.3 EnergyBand Diagrams
Reading Materials.
Session 11 The Bipolar Junction Transistor （ Ⅰ ）
11.1 The Bipolar Junction Transistor Construction
11.2 Transistor Action
11.3 Nonideal Effects
11.4 Base Resistance
Reading Materials
Session 12 The Bipolar Junction Transistor ( Ⅱ )
12.1 Breakdown Voltage
12.2 Frequency Limits of BJT
12.3 The SchottkyClamped Transistor
12.4 Smallsignal Transistor Model
Reading Materials
Session 13 Basics of MOSFETs
13.1 Introduction
13.2 General Characteristics of a MOSFET
13.3 MOS System
13.4 Work Function Differences
13.5 FlatBand Voltage
13.6 Threshold Voltage
Reading Materials
Session 14 Nonideal Effects of MOSFETs
14.1 Introduction
14.2 Effective Mobility
14.3 Velocity Saturation
14.4 Channellength Modulation
14.5 DIBL
14.6 Hotcarrier Effect
14.7 GIDL
Reading Materials
Session 15 Advanced MOSFET Devices
15.1 Introduction
15.2 Channel Doping Profile
15.3 Gate Stack
15.4 Source/Drain Design
15.5 SchottkyBarrier Source/Drain
15.6 Raised Source/Drain
15.7 SOI
15.8 Three Dimensional Structure
Reading Materials
Session 16 Introduction to Integrated Circuits
16.1 Introduction
16.2 Size and Complexity of Integrated Circuits
16.3 Semiconductor Device for Integrated Circuits
16.4 IC Design Process
Reading Materials
Session 17 Analog Integrated Circuits Design
17.1 Introduction
17.2 Analog Signal Processing
17.3 CMOS Technology
17.4 Amplifiers
17.5 Differential Amplifiers
17.6 Operational Amplifiers
17.7 Characterization of Op Amps
Reading Materials
Session 18 Digital Integrated Circuits Design
18.1 Introduction
18.2 The Static CMOS Inverter
18.3 Designing Combinational Logic Gates in CMOS
Reading Materials
Session 19 Radio Frequency Integrated Circuits Design
19.1 Introduction
19.2 RF System Performance Metrics
19.3 RF Transceiver Architectures
19.4 RF Passive Component
内容摘要:
本书以英文的形式介绍了微电子学和集成电路设计的相关技术。全书共分四部分：第一部分为半导体物理基础知识，包括晶格结构、能带结构、载流子浓度和输运等；第二部分介绍半导体器件物理基础理论，包括pn结、肖特基二极管、异质结二极管、双极型晶体管和场效应晶体管；第三部分简要阐述半导体集成电路的设计过程和设计方法；第四部分介绍
半导体集成电路的制造工艺。
本书可作为高等学校微电子学、集成电路设计及相关专业的“专业英语”课程的教材，也可作为从事微电子和集成电路相关科研和工程技术人员的参考书。
书籍规格:
| 书籍详细信息 | |||
| 书名 | 微电子专业英语站内查询相似图书 | ||
| 9787121177606 如需购买下载《微电子专业英语》pdf扫描版电子书或查询更多相关信息，请直接复制isbn,搜索即可全网搜索该ISBN | |||
| 出版地 | 北京 | 出版单位 | 电子工业出版社 |
| 版次 | 1版 | 印次 | 1 |
| 定价(元) | 38.0 | 语种 | 简体中文 |
| 尺寸 | 23 × 18 | 装帧 | 平装 |
| 页数 | 400 | 印数 | |
书籍信息归属:
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