晶体生长手册. 5, 晶体生长模型及缺陷表征

书籍简介:

36 熔体生长体材料晶体的传导和控制。37 Ⅲ族氮化物的汽相生长。38 生长直拉硅晶体中连续尺寸量子缺陷动力学。39 熔融基底化合物晶体生长中应力和位错产生的模型。40 BS和EFG系统中的质量和热量传输。41晶体层结构的x射线衍射表征。42 晶体缺陷表征的X射线形貌技术。43半导体的缺陷选择性刻蚀。44晶体的透射电子显微镜表征。45 点缺陷的电子自旋共振表征。46 半导体缺陷特性的正电子湮没光谱表征。Govindhan Dhanaraj是新罕布什尔州（美国）一家发展可再生能源公司(ARC Energy)晶体生长技术方面的主管，研究重点是LED照明应用的大尺寸蓝宝石晶体生长和特性以及相关晶体生长炉的发展。他从班加罗尔的印度科学院获得博士学位，理科硕士得于安娜大学（印度）。获得博士学位以后，Dr. Dhanaraj 马上加入了国家实验室，目前在印度以前沿技术Rajaramanna中心而闻名。

作者介绍:

Govindhan Dhanaraj is the Manager of Crystal Growth Technologies at Advanced Renewable Energy Company （ARC Energy） at Nashua， New Hampshire （USA） focusing on the growth of large size sapphire crystals for LED lighting applications， characterization and related crystal growth furnace development. He received his PhD from the Indian Institute of Science， Bangalore and his Master of Science from Anna University （India）. Immediately after his doctoral degree， Dr. Dhanaraj joined a National Laboratory， presently known as Rajaramanna Center for Advanced Technology in India， where he established an advanced Crystal Growth Laboratory for the growth of optical and laser crystals. Prior to joining ARC Energy， Dr. Dhanaraj served as a Research Professor at the Department of Materials Science and Engineering， Stony Brook University， NY， and also held a position of Research Assistant Professor at Hampton University， VA. During his 25 years of focused expertise in crystal growth research， he has developed optical， laser and semiconductor bulk crystals and SiC epitaxial films using solution， flux， Czochralski， Bridgeman， gel and vapor methods， and characterized them using x-ray topography， synchrotron topography， chemical etching and optical and atomic force microscopic techniques. He co-organized a symposium on Industrial Crystal Growth under the 17th American Conference on Crystal Growth and Epitaxy in conjunction with the 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009. Dr. Dhanaraj has delivered invited lectures and also served as session chairman in many crystal growth and materials science meetings. He has published over 100 papers and his research articles have attracted over 250 rich citations.

书籍目录:

内容摘要:

书籍规格:

书籍信息归属:

晶体生长手册. 5, 晶体生长模型及缺陷表征是哈尔滨工业大学出版社于2013.1出版的中图分类号为 O78-62 ,O77-62 的主题关于 晶体生长－手册－英文 ,晶体缺陷－手册－英文 的书籍。