普适弛豫定律

Preface

Acknowledgements

Useful Physical Constants

Chapter 1 THE MEANING OF UNIVERSALITY

1.1 The last twelve years

1.2 Basic definitions

1.3 Empirical response functions

1.4 Calculation of total polarisation

1.5 The nature of universality

1.6 Negative capacitance

1.7 Recovery of field on open-circuit Basic equations:

1.8 Energy loss in the time domain

1.9 Concluding comments

Appendix 1.1 Integration in Logarithmic Coordinates

Appendix 1.2 Values of n and cot(nπ/2)

References to chapter 1

Chapter 2 DIELECTTRIC RESPONSE OF SEMICONDUCTORS

2.1 Delayed electronic transitions

2.2 A simple barrier model

2.3 Response of Schottky diodes

Adventitious barriers on semi-insulating material

2.5 Response of p-n junctions

High-purity p-n junctions

Junctions with deep levels

Heavily doped Zener diodes

Conclusions regarding space charge region responses

2.5 Junction diffusion capacitance

a) Low-frequency response

b) High-frequency response

2.6 Volume trapping-detrapping

2.7 Hopping conduction

Electronic processes

Semi-insulating GaAs

Ionic Transport

2.8 Concluding comments

References to Chapter 2

Chapter 3 LUMINESCENCE AND PHOTOCONDUCTIVITY

3.1 The relevance of the subject

3.2 Idealised light emission rates

3.3 Analytical formulation

The limit of rapid trapping

3.4 Review of luminescence data

Exponential decays

Simple power law decays

More complex behaviours

3.5 Conclusions from luminescence

3.6 Photoconductivity in the F-D

Principles of photoconductive behaviour

Analytical formulation

3.7 Conclusions

References to Chapter 3

Chapter 4 "FLAS" DIELECTRIC RESPONSE

Chapter 5 LOW-FREQUENCY DISPERSION

Chapter 6 DC AND AC CONDUCTIVITY

Chapter 7 CHEMICAL REACTION DINETICS

Chapter 8 THERMALLY STIMULATED DEPOLARISATION

Chapter 9 MECHANICAL rELAXATION

Chapter 10 MEASUREMENT AND PRESENTATION OF DATA

Chapter 11 THEORETICAL INTERPRETATIONS

Chapter 12 THE ENERGY CRITERION

Author Index

Subject Index

本书是作者所著《固体中的介电弛豫》一书的姊妹篇，其内容是前作的延续和深化，被电介质领域的许多研究者奉为经典。作者在对普适介电弛豫进行系统描述的基础上，将其概念外推到其他传统电介质研究不涉及的弛豫过程中。书中介绍了“普适性”的含义、“平坦”的介电响应和低频介电弥散现象，讨论了半导体中的介电响应，以及发光、化学反应和力学弛豫等非介电过程的弛豫现象，并从理论角度对上述实验现象进行了解释。 本书可作为物理、电子、材料、电气等相关专业的教师、研究生和科研人员的参考书。

《普适弛豫定律(影印版)》可作为物理、电子、材料、电气等相关专业的教师、研究生和科研人员的参考书。