数字集成电路：设计透视

Chapterl: Introduction 1.1 A Historical Perspective 1.2 Issues in Digital Integrated Circuit Design 1.3 To Probe Further 1.4 Exercises PART 1: A CIRCUIT PERSPECTIVEChapter 2: The Devices 2.1 Introduction 2.2 The Diode 2.2.1 A First Glance at the Device 2.2.2 Static Behavior 2.2.3 Dynamic, or Transient, Behavior 2.2.4 The Actual Diode-Secondary Effects 2.2.5 The SPICE Diode Model 2.3 The MOS(FET) Transistor

Chapterl: Introduction 1.1 A Historical Perspective 1.2 Issues in Digital Integrated Circuit Design 1.3 To Probe Further 1.4 Exercises PART 1: A CIRCUIT PERSPECTIVEChapter 2: The Devices 2.1 Introduction 2.2 The Diode 2.2.1 A First Glance at the Device 2.2.2 Static Behavior 2.2.3 Dynamic, or Transient, Behavior 2.2.4 The Actual Diode-Secondary Effects 2.2.5 The SPICE Diode Model 2.3 The MOS(FET) Transistor 2.3.1 A First Glance at the Device 2.3.2 Static Behavior 2.3.3 Dynamic Behavior 2.3.4 The Actual MOS Transistor-Secondary Effects 2.3.5 SPICE Models for the MOS Transistor 2.4 The Bipolar Transistor 2.4.1 A First Glance at the Device 2.4.2 Stalic Behavior 2.4.3 Dynamic Behavior 2.4.4 The Actual Bipolar Transistor-Secondary Effects 2.4.5 SPICE Models for the Bipolar Transistor 2.5 A Word on Process Variations 2.6 Perspective: Future Device Developments 2.7 Summary 2.8 To Probe Further 2.9 Exercises and Design Problems Appendlx A: Layout Design Rules Appendlx B: Small-Slgnal Models Chapter 3: The Inverter 3.1 Introduction 3.2 Delinitions and Properties 3.2.1 Area and Complexity 3.2.2 Functionality and Robustness: The Static Behavior 3.2.3 Performance: The Dynamic Behavior 3.2.4 Power and Energy Consumption 3.3 The Static CMOS Invener 3.3.1 A First Glance 3.3.2 Evaluating the Robustness of the CMOS Inverter: The Static Behavior 3.3.3 Perfonnance of CMOS Inverter: The Dynamic Behavior 3.3.4 Power Consumption and Power-Delay Product 3.3.5 A Look into the Future: Effects of Technology Scaling 3.4 The Bipolar ECL Inverter 3.4.1 Issues in Bipolar Digital Design: A Case Study 3.4.2 The Emitter-Coupled Logic (ECL) Gate at a Glance 3.4.3 Robustness and Noise Immunity: The Steady-State Characteristics 3.4.4 ECL Switching Speed: Thc Transient Behavior 3.4.5 Power Consumption 3.4.6 Looking Ahead: Scaling the Technology 3.5 Perspective: Area, Perfonnance, and Dissipation 3.6 Summary 3.7 To Probe Further 3.8 Exercises and Design ProblemsChapter 4: Designing Combinational Logk Cates in CMOS 4.1 Introduction 4.2 Static CMOS Design 4.2.1 Complementary CMOS 4.2.2 Ratioed Logic 4.2.3 Pass-Transistor Logic 4.3 Dynamic CMOS Design 4.3.1 Dynamic Logic: Basic Principles 4.3.2 Perfonnance of Dynamic Logic 4.3.3 Noise Considerations in Dynamic Design 4.3.4 Cascading Dynamic Gates 4.4 Power Consumption in CMOS Gates 4.4.1 Switching Activity of a Logic Gate 4.4.2 Glitching in Static CMOS Circuits 4.4.3 Short-Circuit Currents in Static CMOS Circuits 4.4.4 Analyzing Power Consumption Using SPICE 4.4.5 Low-Power CMOS Design 4.5 Perspective: How to Choose a Logic Style 4.6 Summary 4.7 To Probe Further 4.8 Exercises and Design Problems Appendix C: Layout Techniques for Complex CatesChapter 5: Very High Perfonnance Digital Circuits 5.1 Introduction 5.2 Bipolar Gate Design 5.2.1 Logic Design in ECL 5.2.2 Differential ECL 5.2.3 Current Mode Logic 5:2.4 ECL with Active Pull-Downs 5.2.5 Altemative Bipolar Logic Styles 5.3 The BiCMOS Approach 5.3.1 The BiCMOS Gate at a Glance 5.3.2 The Static Behavior and Robustness Issues 5.3.3 Perfonnance of the BiCMOS Inverter 5.3.4 Power Consumption 5.3.5 Technology Scaling 5.3.6 Designing BiCMOS Digital Gates 5.4 Digital Gallium Arsenide Design * 5.4.1 GaAs Devices and Their Properties 5.4.2 GaAs Digital Circuit Design 5.5 Low-Temperature Digital Circuits * 5.5.1 Low-Temperature Silicon Digital Circuits 5.5.2 Superconducting Logic Circuits 5.6 Perspective: When to Use High-Performance Technologies 5.7 Summary 5.8 To Probe Further 5.9 Exercises and Design Problems Appendlx D: The Schottky-Bamer OiodeChapter 6: Designing Sequential Logic Circuits 6.1 Introduction 6.2 Static Sequential Circuits 6.2.1 Bistability 6.2.2 Flip-Flop Classification 6.2.3 Master-Slave and Edge-Triggered FFs 6.2.4 CMOS Static Flip-Flops 6.2.5 Bipolar Static Flip-Flops 6.3 Dynamic Sequentia) Circuits 6.3.1 The Pseudostatic Latch 6.3.2 The Dynamic Two-Phase Flip-Flop 6.3.3 The C2MOS Latch 6.3.4 NORA-CMOS-A Logic Style for Pipelined Structures 6.3.5 True Single-Phase Clocked Logic (TSPCL) 6.4 Non-Bistable Sequential Circuits 6.4.1 The Schmitt Trigger 6.4.2 Monostable Sequential Circuits 6.4.3 Astable Circuits 6.5 Perspective: Choosing a Clocking Strategy 6.6 Summary 6.7 To Probe Funher 6.8 Exercises and Design Problems PART 11: A SYSTEMS PERSPECTIVEChapter 7: Designing Arithmetic Building Blocks 7.1 Introduction 7.2 Datapaths in Digital Processor Architectures 7.3 The Adder 7.3.1 The Binary Adder: Definitions 7.3.2 The Full Adder: Circuit Design Considerations 7.3.3 The Binary Adder: Logic Design Considerations 7.4 The Multiplier 7.4.1 The Multiplier: Definitions 7.4.2 The Array Multiplier 7.4.3 Other Multiplier Structures 7.5 The Shifter 7.5.1 BarrelShifter 7.5.2 Logarithmic Shifter 7.6 Other Arithmetic Operators 7.7 Power Considerations in Datapath Structures 7.7.1 Reducing the Supply Voltage 7.7.2 Reducing the Effective Capacitance 7.8 Perspective: De.sign as aTrade-off 7.9 Summary 7.10 To Probe Further 7.11 Exercises and Design Problems Appendix E: From Datapath Schematics to LayoutChapter 8: Coping wlth Interconnect 8.1 Introduction 8.2 Capacitive Parasitics 8.2.1 Modeling Interconnect Capacitance 8.2.2 Capacitance and Reliability-Cross Talk 8.2.3 Capacitance and Performance in CMOS 8.2.4 Capacitance and Performance in Bipolar Design 8.3 Resistive Parasitics 8.3.1 Modeling and Scaling of Interconnect Resistance 8.3.2 Resistance and Reliability-Ohmic Voltage Drop 8.3.3 Electromigration 8.3.4 Resistance and Performance-RC Delay 8.4 Inductive Parasitics 8.4.1 Sources of Parasitic Inductances 8.4.2 Inductance and Reliability- Voltage Drop 8.4.3 Inductance and Performance-Transmission Lin5e Effects 8.5 Comments on Packaging Technology 8.5.1 Package Materials 8.5.2 Interconnect Levels 8.5.3 Thennal Considerations in Packaging 8.6 Perspective: When to Consider Interconnect Parasitics 8.7 Chapter Summary 8.8 To Probe Further 8.9 Exercises and Design ProblemsChapter 9: Timing Issues in Digital Circuits 9.1 Introduction 9.2 Clock Skew and Sequential Circuit Performance 9.2.1 Single-Phase Edge-Triggered Clocking 9.2.2 Two-Phase Master-Slave Clocking 9.2.3 Other Clocking Styles 9.2.4 How to Counter Clock Skew Problems 9.2.5 Case Study-The Digital Alpha 21164 Microprocessor 9.3 Self-Timed Circuit Design* 9.3.1 Selt-Timed Concept 9.3.2 Completion-Signal Generation 9.3.3 Self-Timed Signaling 9.4 Synchronizers and Arbiters* 9.4.1 Synchronizers-Concept and Implementation 9.4.2 Arbiters 9.5 Clock Generation and Synchronization* 9.5.1 Clock Generators 9.5.2 Synchronization at the System Level 9.6 Perspective: Synchronous versus Asynchronous Design 9.7 Summary 9.8 To Probe Further 9.9 Exerci.ses and Design ProblemsChapter 10: Designing Memory and Array Structures 10.1 Introduction 10.2 Semiconductor Memories--An Introduction 10.2.1 Memory Classification 10.2.2 Memory Architectures and Building Blocks 10.3 The Memory Core 10.3.1 Read-Only Memories 10.3.2 Nonvolati le Read-Write Memories 10.3.3 Read-Write Memories (RAM) 10.4 Memory Peripheral Circuitry 10.4.1 The Address Decoders 10.4.2 Sense Amplifiers 10.4.3 Drivers/Buffers 10.4.4 Timing and Control 10.5 Memory Reliability and Yield 10.5.1 Signal-To-Noise Ratio 10.5.2 Memory yield 10.6 Case Studies in Memory Design 10.6.1 The Programmable Logic Array (PLA) 10.6.2 A 4 Mbit SRAM 10.7 Perspective: Semiconductor Memory Trends and Evolutions 10.8 Summary 10.9 To Probe Further 10.10 Exercises and Design ProblemsChapterll: Deslgn Methodologles 11.1 Introduction 11.2 Design Analysis and Simulation 11.2.1 Representing Digital Data as a Continuous Entity 11.2.2 Representing Data as a Discrete Entity 11.2.3 Using Higher-Level Data Models 11.3 Design Verification 11.3.1 Electrical Verification 11.3.2 Timing Verification 11.3.3 Functional (or Fonnal) Verification 11.4 Implementation Approaches 11.4.1 Custom Circuit Design 11.4.2 Cell-Based Design Methodology 11.4.3 Anay-Based Implementation Approaches 11.5 Design Synthesis 11.5.1 Circuit Synthesis 11.5.2 Logic Synthesis 11.5.3 Architecture Synthesis 11.6 Validation and Testing of Manufactured Circuits 11.6.1 TestProcedure 11.6.2 Design for Testability 11.6.3 Test-Pattem Generation 11.7 Perspective and Summary 11.8 To Probe Further 11.9 Exercises and Design ProblemsProblem Solutions

本书的特点主要包括： （1）将数字集成电路设计中电路与系统的视角统一起来，在系统深入地介绍了深亚微米条件下半导体器件的知识和最基本的反相器后，作者逐渐将这些基础知识引入到更加复杂的模块，比如门、寄存器、控制器、加法器、乘法器和存储器等。在深亚微米的设计条件下，设计者不仅仅需要考虑整个系统的设计问题，还要随时警惕在电路级——比如器件和连线所带来的问题。 （2）本书是第一本将数字集成电路设计问题集中在深亚微米条件下的参考书，并且提供了一个深亚微米条件下的简晶体管模型。另外针对深亚微米条件下设计人员所面对的新挑战，例如互连线问题、信号完整性问题、时钟分布问题、功耗问题等，全书都做了非常详细的论述。（3）书中的内容紧扣当今数字集成电路设计的核心问题，并通过大量的设计实例向读者介绍了最新的设计技术和工程发展现状与趋势。