模拟CMOS集成电路设计

About the Author

Preface

Acknowledgments

1 Introduction to Analog Design

1.1 Why Analog?

1.2 Why Integrated?

1.3 Why CMOS?

1.4 Why This Book?

1.5 General Concepts

1.5.1 Levels of Abstraction

1.5.2 Robust Analog Design

2 Basic MOS Device Physics

2.1 General Considerations

2.1.1 MOSFET as a Switch

2.1.2 MOSFET Structure

2.1.3 MOS Symbols

2.2 MOS I/V Characteristics

2.2.1 Threshold Voltage

2.2.2 Derivation of I/V Characteristics

2.3 Second-Order Effects

2.4 MOS Device Models

2.4.1 MOS Device Layout

2.4.2 MOS Device Capacitances

2.4.3 MOS Small-Signal Model

2.4.4 MOS SPICE models

2.4.5 NMOS versus PMOS Devices

2.4.6 Long-Channel versus Short-Channel Devices

3 Single-Stage Amplifiers

3.1 Basic Concepts

3.2 Common-Source Stage

3.2.1 Common-Source Stage with Resistive Load

3.2.2 CS Stage with Diode-Connected Load

3.2.3 CS Stage with Current-Source Load

3.2.4 CS Stage with Triode Load

3.2.5 CS Stage with Source Degeneration

3.3 Source Follower

3.4 Common-Gate Stage

3.5 Cascode Stage

3.5.1 Folded Cascode

3.6 Choice of Device Models

4 Differential Amplifiers

4.1 Single-Ended and Differential Operation

4.2 Basic Differential Pair

4.2.1 Qualitative Analysis

4.2.2 Quantitative Analysis

4.3 Common-Mode Response

4.4 Differential Pair with MOS Loads

4.5 Gilbert Cell

5 Passive and Active Current Mirrors

5.1 Basic Current Mirrors

5.2 Cascode Current Mirrors

5.3 Active Current Mirrors

5.3.1 Large-Signal Analysis

5.3.2 Small-Signal Analysis

5.3.3 Common-Mode Properties

6 Frequency Response of Amplifiers

6.1 General Considerations

6.1.1 Miller Effect

6.1.2 Association of Poles with Nodes

6.2 Common-Source Stage

6.3 Source Followers

6.4 Common-Gate Stage

6.5 Cascode Stage

6.6 Differential Pair

Appendix A: Dual of Miller's Theorem

7 Noise

8 Feedback

9 Operational Amplifiers

10 Stability and Frequency Compensation

11 Bandgap References

12 Introduction to Switched-Capacitor Circuits

13 Nonlinearity and Mismatch

14 Oscillators

15 Phase-Locked Loops

16 Short-Channel Effects and Device Models

17 CMOS Processing Technology

18 Layout and Packaging

Index

《国外电子电气经典教材系列：模拟CMOS集成电路设计（英文版）》介绍模拟CMOS集成电路的分析与设计，着重讲解技术的最新进展和设计实例，从MOSFET器件的基本物理特性开始，逐章分析CMOS放大单元电路、差分放大器、频率响应、噪声、反馈放大器与稳定性、运算放大器、电压基准源与电流基准源、离散时间系统、差分电路及反馈系统中的非线性、振荡器和锁相环等基础模拟电路的分析与设计。
　　《国外电子电气经典教材系列：模拟CMOS集成电路设计（英文版）》还介绍了集成电路的基本制造工艺、版图和封装设计的基本原则。本书自出版以来得到了国内外读者的好评和青睐，被许多国际知名大学选为教科书。同时，由于原著者在世界知名顶级公司的丰富研究经历，使本书也非常适合作为CMOS模拟集成电路设计或相关领域的研究人员和工程技术人员的参考书。

《国外电子电气经典教材系列：模拟CMOS集成电路设计（英文版）》特色：
　　·涵盖模拟CMOS集成电路分析、设计的完整流程，是学习模拟电路设计的入门宝典。
　　·将电路的基本概念、设计原理与实际工程应用关联，理论与实际结合，激发读者的兴趣。
　　·在阐述各种模拟电路的改进和新电路结构的产生时，着重观察和分析，不断地提出问题和解决问题。
　　·通过学习本书对电路的严谨分析，逐步掌握用CMOS工艺技术来设计模拟电路。