硅加工中的表征

Preface to the Reissue of the Materials Characterization Series ix

Preface to Series x

Preface to the Reissue of Characterization in Silicon Processing xi

Preface xii

Contributors xiv

APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH

1.1 Introduction 1

1.2 Silicon Epitaxial Growth 2

Basic Chemical Reactions 2， Precleaning Considerations 3，

Reactor Types 3

1.3 Film and Process Characterization 4

Crystal Quality 4， PrecleanQuality 6， Thickness 9， Dopant

Concentration and Dopant Profiling 12

1.4 Selective Growth 14

Basic Process Considerations 14， Defect Density and Growth

Morphology 15， Predean Quality 18， Thickness 18

1.5 Si1 _xGex Epitaxial Growth 18

Material Considerations 18， Reactor Types 19

1.6 Si1_ xGex Material Characterization 20

Composition and Thickness 20， Growth Morphology 22， Lattice

Strain and Critical Thickness 23， Relaxation Kinetics 24， Bandgap

Measurements 24， Interracial Abruptness and Outdiffusion 25，

Impurity Profiles 25

1.7 Summary 26

POLYSILICON CONDUCTORS

SILICIDES

ALUMINUM— AND COPPER—BASED CONDUCTORS

TUNGSTEN—BASED CONDUCTORS

BARRIER FILMS

APPENDIX： TECHNIQUE SUMMARIES

This volume is one of a series originally issued under anotherimprint. The other volumes in this series are as follows：Characterization of Catalytic Materialsisrael E. Wachs；Characterization of Metals and AlloysPaul H. Holloway and P. N Vaidyanathan；Characterization of CeramicsRona/d E. Loehman；Characterization of PolymersNed J. Chou， Stephen R Kowalczyk， Ravi Saraf， and Ho—Ming Tong；Characterization in Compound Semiconductor ProcessingGary McGuire and Yale Strausser；Characterization of Integrated Circuit Packaging MaterialsThomas M. Moore and Robert G. McKenna；Characterization of Composite MaterialsHatsuo Ishida；Characterization of Tribological MaterialsWilliam A. Glaeser；Characterization of Optical MaterialsGregory J. Exarhos；Characterization of Organic Thin FilmsAbraham Ulman.